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| SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8 7 ZVP2110G D COMPLEMENTARY TYPE ZVN2110G PARTMARKING DETAIL ZVP2110 G D S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -100 -310 -3 20 UNIT V mA A V W C 2 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) -750 8 125 100 35 10 7 15 12 15 -100 -1.5 -3.5 20 -1 -100 MAX. UNIT CONDITIONS. V V nA A A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-100 V, VGS=0 VDS=-80 V, VGS=0V, T=125C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-375mA VDS=-25V,ID=-375mA mA Static Drain-Source On-State RDS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf mS pF pF pF ns ns ns ns VDS=-25V, VGS=0V, f=1MHz VDD -25V, ID=-375mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3 - 429 ZVP2110G TYPICAL CHARACTERISTICS 250 -1.6 - Drain Current (Amps) gB -Transconductance (mS) -1.4 -1.2 -1.0 -0.8 VGS= -20V -16V -12V -10V -9V -8V -7V 200 150 VDS=-10V 100 -0.6 -0.4 -0.2 -6V -5V -4.5V -4V -3.5V 0 -2 -4 -6 -8 -10 50 I 0 0 -2 -4 -6 -8 -10 I 0 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Transconductance v gate-source voltage Saturation Characteristics -Gate Source Voltage (Volts) 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 3.0 80 ID=- 0.5A VDS= -25V -50V -100V C-Capacitance (pF) 60 Ciss 40 20 Coss 0 0 -20 -40 -60 -80 Crss -100 5 VDS-Drain Source Voltage (Volts) V/ Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage -Drain Source On Resistance 100 2.6 2.4 and V VGS=-4V -5V 10 2.2 2.0 1.8 1.6 VGS=-10V ID=-0.375A -7V -10V Normalised R 1.4 1.2 1.0 0.8 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 -20V VGS=VDS ID=-1mA 1 10 100 1000 R ID-Drain Current (mA) Junction Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3 - 430 |
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